The standout feature of the Ryzen 7 9800X3D is its use of AMD's proprietary 3D V-Cache technology. This innovation places the SRAM module, responsible for the L3 and X3D cache memory, beneath the CCD (Core Complex Die) that houses the Zen 5 cores. While the integration of the SRAM module was already known, Wassick’s investigation shed light on the processor’s internal composition, including the unexpected use of "fake silicon."
Wassick noted that the 3D V-Cache memory module extends 50 µm beyond the edges of the CCD on all four sides. This differs from the previous Ryzen 7000X3D series, where the SRAM was 30.3 µm smaller than the CCD. Additionally, both the dies (3D V-Cache and CCD) in the Ryzen 7 9800X3D are thinner than those of the previous generation, measuring less than 20 µm without the internal connections.
This reduced thickness makes the components fragile, necessitating additional measures to ensure structural durability. Wassick's analysis suggests that AMD employed "fake" or empty silicon to fill gaps and stabilize the chip’s overall structure.
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