Space radiation is a mixture of high-velocity charged particles. These particles interact with semiconductors, affecting their electrical properties and potentially causing failures.
When high-energy particles traverse a semiconductor, they generate electron-hole pairs. While electrons leave quickly, holes accumulate, altering transistor properties such as threshold voltage and transmission delays. TID is measured in rads, where different technologies have varying thresholds:
High-energy particles can displace atoms in a material's crystal lattice, forming defect clusters that alter device characteristics. This primarily affects bipolar transistors, solar panels, and photoelectric devices, reducing efficiency and altering performance.
CMOS components contain parasitic PNPN structures. A charged particle impact can switch these structures on, causing a short circuit and potentially destroying the device. Protective circuitry is essential to detect overcurrent and cut off power.
SEU occurs when a high-energy particle changes a digital device's state. Common effects include:
Occurs in MOSFET transistors when a high-energy particle activates a parasitic bipolar transistor, causing an overcurrent that breaks down the MOSFET.
High-energy particles create high-density plasma near the gate, leading to an irreversible transistor breakdown.
Space radiation poses significant risks to electronic devices, affecting their longevity and functionality. Understanding and mitigating these effects is crucial for spacecraft design and reliability.
